发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To reduce the area of an element by differentiating the thicknesses of wiring layers for every wiring. CONSTITUTION:A metallic wiring layer 7 is selectively attached to only the wiring portion of high-current regions. The thickness h4 of the metallic wiring in the high- current regions 6 and 7 is thicker than the thickness h3 of the metallic wiring in the low-current region 5. By this method, the wiring width l4 which is one fifth the width of conventional wirings is possible, and the area required for wiring in the high-current regions in a large-scale-integrated circuit can be reduced.
申请公布号 JPS55141739(A) 申请公布日期 1980.11.05
申请号 JP19790049922 申请日期 1979.04.23
申请人 NIPPON ELECTRIC CO 发明人 HASHIMOTO KOUICHI;OOZEKI NOBORU
分类号 H01L21/3205;H01L23/52;(IPC1-7):01L21/88 主分类号 H01L21/3205
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