| 摘要 |
PURPOSE:To enhance the integrity of and the operating speed of an I<2>L by forming a p-type region on an n-type semiconductor substrate, forming a plurality of rows of n-type regions at predetermined interval and forming an insulating film for crossing the semiconductor regions of the respective rows. CONSTITUTION:An n<+>-type buried layer 5 and an n-type epitaxial layer 6 are formed on a p<->-type silicon crystal substrate 4. Then, a p-type base layer 2 is formed on the surface of the n-type epitaxial layer 6, and an n<+>-type collector layer 3 is formed in lateral streak state on the surface of the layer 2. Thereafter, a deeper fine groove 8 than the p-type base layer 2 is so formed as to cross longitudinally the lateral streak of the layers 2 and 3, and a semiconductor oxide film 9 is so formed as to bury the groove 8. |
