| 摘要 |
PURPOSE:To effectively concentrate an electric current to an active layer and improve the characteristics of a semiconductor laser by sequentially forming respective layers in a groove formed on a substrate, forming electrodes on the groove communicating with the uppermost high resistive layer and surrounding the active layer with the surface of the substrate in the groove. CONSTITUTION:A groove 2 having V shape in cross section is etched and formed on a plane (100) of an Si-doped n-type GaAs substrate 1. The Sn-doped n-type Ga0.7Al0.3As first layer 3, the Ge-doped p-type GaAs second layer 4, the Ge-doped p-type Ga0.7Al0.3As third layer 5 and Ge-doped p-type GaAs fourth layer 6 are sequentially grown in liquid phase epitaxially in the groove 2. Proton H<+> ion is implanted onto the entire surface of the substrate 1. The epitaxial layer isipartally converted into an insulator layer 8. The masks are matched on the groove 2, the surface portions of the layers 8 and 6 are etched to form a groove 9 having a width of approx. 3mu. Electrode material is coated on the entire surface to form an ohmic electrode 10 reaching the layer 6. |
