METAL LAYER OF SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A metal wiring of the semiconductor device and a method of formation thereof are provided to improve the property of the diffusion barrier by forming the diffusion barrier in which the TaBN film of the amorphous is inserted. A semiconductor device comprises a semiconductor substrate(100), and insulating layers(108,112) formed on the top of the semiconductor substrate. A metal layer(120) is formed into the damascene pattern within the insulating layer. A diffusion barrier(116) having a TaBN film(114a) of the amorphous between the metal layer and the insulating layer are formed. The damascene pattern is formed in the single trench or the double trench. The damascene pattern has the structure in which one or more contacts are connected to the trench. The TaBN film of the amorphous is formed by nitride-processing the TaxBy film. The seed layer is formed between the diffusion barrier and the metal layer. The seed layer is made of an Ru layer(118). The diffusion barrier comprises the TaN film which is arranged between the insulating layer of the amorphous and the TaBN film.