| 摘要 |
<p>A manufacturing method of the semiconductor device is provided to increase the contact area between the phase changing film and the lower electrode contact plug by forming the lower electrode contact plug through the etch back process. A bottom electrode is formed on the top of a semiconductor substrate(100). Insulating layers(102,108) are formed on the top of the bottom electrode. The contact hole which exposes the bottom electrode is formed by selectively etching the insulating layer. A conductive film(110) is formed on the top of the insulating layer. The conductive film is back etched and the top of the lower electrode contact plug is pressed. The phase changing film overlapped with the lower electrode contact plug on the top of the insulating layer is formed. The upper electrode is formed on the top of the phase changing film. The insulating layer is formed of the nitride film. The conductive film is formed of the titanium nitride(TiN) film. The phase changing film is formed of the GeSb2Te4 film or the Ge2Sb2Te5 film.</p> |
