| 摘要 |
<p>A field effect transistor device comprises a semiconductor layer 14' on a semi-insulating substrate 12'. Source, gate 16' and drain 20' electrodes have portions extending over the layer 14' and contacts 40 (source), 42 (drain) and 44 (gate) to all three electrodes extend through the substrate so that the transistor device can be mounted directly on a microstrip circuit with the gate and drain contacts connected to microstrip conductors 56 and 54 and the source contact connected via conductor 52 to the ground plane 53 on the underside of the microstrip substrate 58. The use of wire bonding from semiconductor electrodes to microstrip conductors is eliminated. <IMAGE></p> |
