| 摘要 |
PURPOSE:To provide an oscillating beam having preferable symmetry from a semiconductor laser by forming a slender groove at the center on the surface of a semiconductor substrate, and continuously growing a light enclosure layer, light guide, carrier enclosure layer, active layer, light and carrier enclosure layer on the entire surface including the groove. CONSTITUTION:A band-like recess groove 22 is formed at the center on the surface of an n-type GaAs substrate 13, and a p-type GaAs layer 19 is diffused around the groove 22. Then, an n-type GaAlAs light enclosure layer 14, an n-type GaAlAs light guide and a carrier enclosure layer 15, a p-type GaAs active layer 16, a p-type GaAlAs light and carrier enclosure layer 15, a p-type GaAs active layer 16, a p-type GaAlAs light and carrier enclosure layer 17, and a p-type GaAs contact easiness layer 18 are sequentially laminated on the entire surface including the groove and epitaxially grown thereon. At this time the aluminum composition ratio of the layer 15 is implanted into the layer 16 with carrier completely enclosed, but the light generated in the layer 16 is sufficiently impregnated at the forbidden band width and refractive index, and the layer 15 is formed arcuate with the groove 22. Then, the electrodes 21 and 20 are coated on both front and back surfaces thereof. |
