| 摘要 |
PURPOSE:To enable thermally pressure bonding of an inner lead to an electrode bump at low load by providing suitable ruggedness on the surface to be bonded of the bump and also on the surface to be bonded of the inner lead of a tape carrier type semiconductor device. CONSTITUTION:The surface to be bonded of an inner lead 2 secured onto a carrier tape 1 is formed with sawtooth ruggedness formed by etching on the surface to be bonded to the bump electrode 3 on a tape 4. The lead 2 is made of Cu and plated with Au, and the electrode 3 has Au surface. According to this configuration, the surface of the electrode 3 is initially point contacted with the surface of the lead to concentrate the contact load at the point contact portion. Therefore the point contact portion is readily deformed at low load and accordingly thermally pressure bonded at low load to obtain the bonded portion 5 having high rigidity and reliability. According to this method, Ni or Cu or the like can be used at plating inexpensively as compared with Au. Even in case of Au-Sn eutectic bonding system, it can prevent a shortcircuit owing to Au-Sn alloy flow-out. |
