| 摘要 |
PURPOSE:To prevent the damage of memory information of a semiconductor element by adding a simple step of coating the element with resin film and shielding an alpha ray irradiation from a sealing material to the element. CONSTITUTION:A semiconductor element 2 is secured to a ceramic container 1, kovar external connection terminal 3 is contacted with a ceramic wall 4 and the container 1 and connected to an internal wire 9. An aluminum wire 5 is connected between the element 2 and the terminal 3. Further, a cover 6 is bonded to the wall 4 with low melting point glass 8 or the like. When resin film 7 such as polyimide or the like is coated on the surface of the cover side of the element 2, an alpha ray irradiated from the sealing member 8 is shielded by the film 7 to affect no element 2. Therefore, it can prevent the damage of the stored information. In order to adhere the film 7 to the surface of the element, the element is heated to approx. 300 deg.C, and the film is placed on the surface of the element. Or it may also be bonded thereto by epoxy resin. |
