| 摘要 |
PURPOSE:To increase the capacity of a semiconductor memory device by forming a memory cell with double pn-junctions for storing the information by the breakdown or non-breakdown of one junction in the device, having no life time killer in the semiconductor substrate and employing metal for an electrode formed on the junction. CONSTITUTION:A memory cell unit forming a semiconductor memory device is formed as below. A plurality of such units are connected in predetermined system. That is, a p-type silicon substrate 21 containing no life time killer such as Au or the like is used for the cell unit, an n<+>-type buried region 23 is diffused thereon, and an n-type layer 22 is epitaxially grown on the entire surface. Then, the layer 22 is isolated into island state by a p<+>-type region 24 reaching the substrare 21, and a p-type region 25 is diffused corresponding to the region 23 therein. Thereafter, an n<+>-type region 26 is formed therein, an insulating film 27 is coated on the entire surface including the region 26, an opening is perforated at the region 26, an n-type lead region 28 is extended on the film 27, making contact with the region 26, and a metal electrode 29 is coated thereon. |
