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发明名称
PROCEDE DE TRAITEMENT D'UN SUBSTRAT DONNEUR POUR LA FABRICATION D'UN SUBSTRAT.
摘要
申请公布号
FR2907965(B1)
申请公布日期
2009.03.06
申请号
FR20060009465
申请日期
2006.10.27
申请人
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES SOCIETE ANONYME
发明人
BOURDELLE KONSTANTIN
分类号
H01L21/762;H01L21/265
主分类号
H01L21/762
代理机构
代理人
主权项
地址
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