发明名称 NON-VOLATILE MEMORY DEVICE CONTAINING DIODE-MEMORY NODE AND CROSS-POINT MEMORY ARRAY CONTAINING THE SAME
摘要 <p>Provided are a non-volatile memory device and a cross-point memory array including the same which have a diode characteristic enabling the non-volatile memory device and the cross-point memory array including the same to operate in a simple structure, without requiring a switching device separately formed so as to embody a high density non-volatile memory device. The non-volatile memory device includes a first electrode; a diode-storage node formed on the first electrode; and a second electrode formed on the diode-storage node.</p>
申请公布号 KR20090045653(A) 申请公布日期 2009.05.08
申请号 KR20070111584 申请日期 2007.11.02
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, KI HWAN;PARK, YOUNG SOO;KANG, BO SOO;LEE, MYOUNG JAE;LEE, CHANG BUM
分类号 H01L27/115;H01L21/8247 主分类号 H01L27/115
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