NON-VOLATILE MEMORY DEVICE CONTAINING DIODE-MEMORY NODE AND CROSS-POINT MEMORY ARRAY CONTAINING THE SAME
摘要
<p>Provided are a non-volatile memory device and a cross-point memory array including the same which have a diode characteristic enabling the non-volatile memory device and the cross-point memory array including the same to operate in a simple structure, without requiring a switching device separately formed so as to embody a high density non-volatile memory device. The non-volatile memory device includes a first electrode; a diode-storage node formed on the first electrode; and a second electrode formed on the diode-storage node.</p>
申请公布号
KR20090045653(A)
申请公布日期
2009.05.08
申请号
KR20070111584
申请日期
2007.11.02
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
KIM, KI HWAN;PARK, YOUNG SOO;KANG, BO SOO;LEE, MYOUNG JAE;LEE, CHANG BUM