发明名称 OFFSET CORRECTION TECHNIQUES FOR POSITIONING SUBSTRATES
摘要 <p>A method for calculating a process center for a chuck in a processing chamber is provided. The method includes generating pre-processing and post-processing measurement data points, which is perform by measuring thickness of a film substrate at a set of orientations and a set of distances from a geometric center of the substrate. The method also includes comparing the pre-processing and post-processing measurement data points to calculate a set of etch depth numbers. The method further includes generating etch profiles for the set of orientations. The method yet also includes extrapolating a set of radiuses, which is associated with a first etch depth, from the etch profiles. The method yet further includes generating an off-centered plot, which is a graphical representation of the set of radiuses versus the set of orientations. The method more over includes calculating the process center by applying a curve-fitting equation to the off-centered plot.</p>
申请公布号 KR20090064443(A) 申请公布日期 2009.06.18
申请号 KR20097007282 申请日期 2007.09.14
申请人 LAM RESEARCH CORPORATION 发明人 CHEN JACK;BAILEY ANDREW D. III;MOORING BEN;CAIN STEPHEN J.
分类号 H01L21/68;H01L21/3065;H01L21/66 主分类号 H01L21/68
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