| 摘要 |
PURPOSE:To microminiaturize a bipolar integrated circuit including I<2>L in two- layer wiring technology and perform high integrity of the integrated circuit by forming high density polycrystalline silicon in the wiring material of the first layer in the bipolar integrated circuit. CONSTITUTION:After the base and collector and the like of an I<2>L are diffused and formed, polycrystalline silicon 6 becoming the wire of the first layer is accumulated in a thickness of approx. 3,000Angstrom on the entire surface. At this time the impurity density in the silicon 16 is, for example, inclusive with high phosphorus density. Then, the silicon 6 is removed at the unnecessary portion. After completing the patterning of the silicon 16, a CVD SiO2 12 is accumulated in a thickness of approx. 5,000Angstrom in a manner including As or the like in high density on the entire surface as phosphorus becoming an insulator between the layer thereon. Then, contact holes to the base or the like and to polycrystalline wire 6 are perforated at the SiO2 12. Thus, a signal in the I<2>L circuit can be applied perpendicularly to the metallic wire of an injector and the metallic wire in the I<2>L circuit to microminiaturize the integrated circuit. |
