SEMICONDUCTOR INTEGRATED CIRCUIT

摘要

PURPOSE:To increase the width of a base of a semiconductor integrated circuit and increase the current amplification factor of an I<2>L by forming the internal base of a reverse conducting type semiconductor layer to an opitaxial layer in predetermined width in the epitaxial layer and activating the semiconductor layer to form the I<2>L. CONSTITUTION:Boron implantation condition is varied to an accelerating voltage of 150-300keV to form a flat density profile in a width of 0.5mum in the active base layer, and activate it by annealing or the like to form an I<2>L. In this case the resistance of an epitaxial layer 2 is set to 2OMEGAcm and the dosage of boron implantation is set to 10<12>/cm<2>. In the characteristics of the I<2>L, the withstanding voltage is approx. 5V, and the current amplification factor of the vertical transistor is 50. Thus, the current amplification factor of the vertical transistor may be increased without producing punch through mode with the withstanding voltage retained at high value.