| 摘要 |
PURPOSE:To prevent the disconnection of an aluminum wire and to enhance the reliability of a semiconductor device by forming an insulating layer made of silicon nitride on the surface of a semiconductor substrate and a metallic wiring layer and coating phosphorus, silicon, glass on the surface of the metallic wiring layer. CONSTITUTION:A field oxide film 7 is formed on a p-type silicon substrate 1, and a gate insulating film 6 and a gate electrode 5 made of polycrystalline silicon are selectively formed thereon. A PSG film 8 is then formed on the surface of the substrate 1 to form a source region 9, a drain region 10 and an aluminum wiring layer 2 thereon. Thereafter, a silicon nitride layer 13 is formed as an insulating film between the wiring layers by a CVD process, openings for connecting between the layers are perforated, the second aluminum layer is then formed thereon, and patterned to form the second aluminum wiring layer 3 thereon. |
