| 摘要 |
PURPOSE:To enable an etching step in an optimum state by coating an SiO2 film on an aluminum film, forming an etching end point detecting pattern thereon and employing an etching solution for producing air bubbles when making contact with the aluminum film. CONSTITUTION:After a functional element is formed on a silicon substrate, aluminum is evaporated on the substrate. An SiO2 film in then formed on the aluminum film, a negative photoresist film is coated thereon, exposed with light and developed by employing a photomask having an etching end point detecting pattern a. Thereafter, the substrate is etched by employing an SiO2 etching solution for producing air bubbles when making contact with aluminum. When the aluminum starts being etched, a great deal of air bubbles are produced at the portion of an etching end point detecting pattern from the result of the above processing. |
