| 摘要 |
PURPOSE:To prevent an electric leakage of a semiconductor device by forming a thin film layer which is not corroded at etching time in the boundary portion between a high density impurity region and a thick silicon oxide layer and forming an ohmic contact between the impurity region and the metallic wire. CONSTITUTION:A thin film layer 6 which is not corroded by the etching solution of a thick silicon oxide film 2 is formed on a monocrystalline silicon substrate 1, and other portion of the layer 2 is so removed as to retain a part of the layer 6 in the boundary portion between the substrate 1 and the film 2. Then, a high density impurity region 3 is formed in the substrate, an insulating film 4 is formed thereon, a metallic wire 5 is then coated through the opening so as to obtain a semiconductor device having an ohmic contact with the substrate 1. |
