| 摘要 |
PURPOSE:To reduce the thermal deterioration of a gallium phosphide red light emitting element and to enhance the efficiency thereof by fabricating a red light emitting element with one cooling step. CONSTITUTION:A board is installed in a reaction tube 23 without contacting a GaP monocrystal substrate 15 with Ga solution 16. After suitable gas is substituted, hydrogen is flown, electric furnaces 21, 22 are energized to heat them. Thus, quartz glass is reduced by Ga and hydrogen, partially becomes silicon, and molten into Ga molten liquie 16. Thereafter, a slide plate 13 is externally moved to contact the substrate 15 with the Ga solution 16. After the contact, a reaction system is cooled, the board 24 is cooled from 1,030 deg.C-1,010 deg.C. At this time the valve of a bomb 27 is closed, the valve 26 of an argon bomb 28 including oxygen by 2% is opened, and flown in the reaction system. Then, the valve 26 is closed, and a valve of an argon bomb 29 containing 50ppm of oxygen is opened. Simultaneously, zinc vapor source 25 is filled in the reaction tube within the furnace 22 and heate. Thereafter, the board 24 is cooled to isolate the substrate 12 from the molten solution 16, and the furnaces are deenergized. |
