| 摘要 |
PURPOSE:To obtain a highly reliable semiconductor device without covering the contact hole for formation of the electrode by performing a heat treatment to alloy aluminum and silicone over the entire surface of substrate being covered with an aluminum film. CONSTITUTION:An SiO2 film 2, a highly concentrated impurity diffusion layer 3, an SiO2 film 4 and a polycrystalline silicone layer 5 are formed on the silicone layer 5. Then, an aluminum thin film 6 containing silicone is covered over the entire the surface of the semiconductor substrate. Under such a condition, a heat treatment is performed to alloy the aluminum and silicone into an eutectic alloy 9. Subsequently, with the photoresist 7 as a mask, the aluminum thin film 6 is removed leaving the regions for the electrode and the wire distribution. At the same time, the eutectic alloy 9 is removed between the electrode and the wire, thereby solving problems including electric leakage and short-circuiting. |
