| 摘要 |
A method for growing GaAs crystals comprises (i) coating photoresist (22) onto silicon circuit board (21) to produce a matrixpattern, (ii) etching and removing remained photoresist (22), (iii) vapour coating with soft material (23), (iv) selectively etching to remove soft material (23) except for a part, and (v) growing GaAs single crystal layer (24) by MBE or MOVCD method.
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