| 摘要 |
PURPOSE:To make an electrode connection facile by a method wherein anisotropic etching on a main surface of a semiconductor substrate is performed several times and a plane which has difference to the main surface and is parallel to the main surface is formed, and by an electrode connection by a pressure contact on the main surface a lead wire is connected, and by the electrode on an etched region another lead wire is connected. CONSTITUTION:A central region of a substrate 1 on which pn-junctions 10, 11 are formed is etched by anisotropic etching to form a V-shaped groove 6, and furthermore a wider and more shallow V-shaped groove 7 is formed, and is this V-shaped groove a gate electrode 2 which has an intermediate insulating film between the V- shaped groove and it is formed, and a lead wire is connected with it, and electrodes 4, 5 are provided on front and back surfaces of the substrate. In anisotropic etching process a dimension of an opening is influential on a maximum value of an etching depth, and various stereostructures are gained with varying mask dimensions and etching time, and a lead wire is connected with electrodes which are pressed against the main surface of the device and furthermore a lead wire is connected with the electrode which is provided on the etched region, and therefore it is possible to simplify a miniature and complicated connection of a semiconductor device. |
