Semiconductor device subjected to heat treatment in reactor - has double walls with purging gas flowing through cavity entraining impurities

摘要

The semiconductor device, is processed by subjecting it to an increased temperature, and is placed in a reactor inside a heating chamber. The reactor has a double wall. The cavity between the two walls in flushed with a gas during the treatment so that it, will entrain any impurity in the cavity. The reactor (20) is made from quartz, polysilicon or silicon carbide. The gas contains a halogeneous acid such as hydrogen chloride. The halogeneous acid is conveyed by a carrier gas such as oxygen. The temp. to which the semiconductor component is raised is up to 1050 deg.C.