| 摘要 |
PURPOSE:To expand a pn-junction area and to change a capacity in a forward micro area. CONSTITUTION:In case the pn-junction of a semiconductor is forward biased, a current variable type capacity characteristic of high sensitivity and linearity is shown in a micro area until the transfer of an electron or a positive hole is saturated. When a pn-junction is consisted of a base and a collector of a transistor and an emitter is grounded or a positive potential is applied, a carrier injection efficiency can be changed. Therefore, a current-capacity characteristic can be changed. This element has a small pumping current, has an excellent characteristic of linearity and has a wide variable capacity. Also a new current variable type capacity element can be obtained by changing the amount of an impurities injection and the thickness of a barrier. |
