| 摘要 |
PURPOSE:To make possible multi-layer Al wiring without lowering the yielding rate by a method wherein a conductive film in the wiring region which has been attached simultaneously with a gate conductive film is utilized for wiring in the lowest layer. CONSTITUTION:After making a field oxidized film 15 and a gate oxidized film 16 on a substrate 14, laminating a conductive polycrystalline-Si, providing a photoresist mask 18 and etching them in the gas plasma of CF4, a gate electrode 13 and a wiring layer 10 are simultaneously formed. The oxidized film 16 is removed by means of fluoric acid with the mask 18 and the gate electrode 13 as a mask for etching. Then a source 19 and a drain 20 are formed by the ion injection method, and they are convered by PSG21. Next an Al electrode and wiring 11 are made after providing a window. Then the second Al wiring is added via an insulating layer. By this method, processes after the formation of the polycrystalline-Si film become those for slicing, so the length of each process is long because the formation of source and drain regions is included in them. However, the number of processes is not increased, thus making it possible to form 3 layer wiring by the same method for the conventional 2 layer Al wiring. Consequently, this method is effective for a comparatively large volume of estimated production. |
