发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent the corrosion by a method wherein Ti is made to adhere to an Al wiring layer and etched, then it is heat treated after the removal of a cracked portion on the Ti film, and a Ti-Al alloy or TiAl3 film is formed while Ti which has not reacted yet is removed. CONSTITUTION:Al 3, Ti 4 are laminated on an Si substrate through an oxidized film 2. After adding a photoresist mask 8 and etching Ti, Al gradually in an etching liquid specified, a Ti layer 4a having the shape of a canopy is produced. Since this portion 4a will cause the abnormal growth of the portion when covering it with PSG later, it is etched in a liquid of ethylene diamine quatriacetic acid-NH4OH- H2O2-H2O series. After removing a mask 8 and heating treating it in H2+N2, a thin layer 5 of TiAl2 or Ti-Al alloy. Next Ti 4 which has not reacted yet is also etched in the same liquid. Then if PSG6 is piled, cracking of the PSG based on the hillock of the Al layer is not produced because of the layer 5, thus preventing the corrosion of Al 3. An opening is made in the PSG 6 to provide Al wiring.
申请公布号 JPS55138260(A) 申请公布日期 1980.10.28
申请号 JP19790044238 申请日期 1979.04.13
申请人 TOKYO SHIBAURA ELECTRIC CO 发明人 KOMATSUBARA YOSHIAKI
分类号 H01L23/52;H01L21/28;H01L21/3205 主分类号 H01L23/52
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