| 摘要 |
PURPOSE:To attempt reduction of area and capacity to ground of an integrated circuit by a method wherein a crossover part of I<2>L and a transistor in an interface circuit are assembled in the same place. CONSTITUTION:A p-layer 32 and n<+>-layers 33a, 33b are formed in order in an n- layer 31 surrounded by n<+>-layers 34, 35. By this constitution, a backward interfacing transistor consisted of a emitter layer 31, a base layer 32 and a collector layer 33a is formed. A diode D is constituted by short-circuiting a base electrode 37 and an electrode 39 of layer 33b, and is connected to a preceding circuit, and a collector electrode 38 is connected to an input terminal of I<2>L. A wiring layer 29 to make crossover is made on an insulating layer 28 going across the layer 33a between the electrodes 38, 39. By forming the interfacing transistor under the crossovering wiring like this, the occupied area is reduced and the capacity to ground is also reduced. |
