| 摘要 |
PURPOSE:To obtain a transistor for the use of high output and high frequency by a method wherein the transistor is constituted on a base body of columnar semiconductor crystal to prevent the formation of inversion layer and to make the external base resistance and the external base-collector capacity to be small remarkably. CONSTITUTION:SiO2 films 25a1, 25b1 are formed selectively on a columnar n<+>- type Si substrate 21, and an n<->-epitaxial-layer 22 and polycrystalline Si layers 26a1, 26b1 are laminated on it. Then B ions are implanted, extended and diffused to form a p<+>-base-layer 23 and polycrystalline Si layers 26a2, 26b2 on the external circumference. The base body 21 is exposed by selective etching, and is covered with an insulating film 27. After base electrodes 29a, 29b are prepared by the selective etching of film 27, Au ions are implanted into the p<+>-base-layer 23, and are extended and diffused to form an n<+>-emitter-layer 24. Finally collector electrodes 30a, 30b and an emitter electrode 28 are attached. By this construction, the base layer 23 can be made to narrow layer, and as the base resistance is low and the capacity between external base and collector is remarkably small that its high frequency characteristic is satisfactory and easily be used for high power output by extending the length of emitter layer. |
