发明名称
摘要 A semiconductor device comprising a semiconductor substrate having at least two resistor elements, wherein said resistor elements have a specific resistance ratio relative to each other, an insulation layer formed on a major surface of said semiconductor substrate, a circuit wiring layer formed on said insulation layer covering a portion of said insulation layer which corresponds to at least one of said resistor elements, and a dummy wiring layer made of the same material as that of the circuit wiring layer and formed on the insulation layer covering that portion of said insulation layer which corresponds to the resistor element or elements not covered by said circuit wiring layer, and where the ratio of an overlapping area of one resistor element in said circuit wiring layer and an overlapping area of the other resistor element and said dummy wiring layer is equal to a resistance ratio of said resistor elements.
申请公布号 JPH0130304(B2) 申请公布日期 1989.06.19
申请号 JP19810004327 申请日期 1981.01.14
申请人 TOKYO SHIBAURA ELECTRIC CO 发明人 KOMATSU SHIGERU;NAKAMURA MICHIO;FUJITA KATSUJI
分类号 H01L27/04;H01L21/768;H01L21/822;H01L23/522;H01L23/58;H01L27/08 主分类号 H01L27/04
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