发明名称 SEMICONDUCTOR LOGIC CIRCUIT
摘要 PURPOSE:To establish the logic circuit which can make easy the setting to the specified value and change of input transit level by using IGFET. CONSTITUTION:N channel MOSFET is used for IGFET. MOSFETQ11 is added to the inversion circuit consisting of MOSFETs Q9 and Q10 connecting the gate to the load MOSFETQ8 and the input terminal 8. MOSFETQ10 is inserted between the output node 9 and the drain of MOSFETQ9. The drain of MOSFET Q11 is connected to the power supply VDD and the source is connected to the node 10, and the gate is connected to the output node 9. Further, by suitably selecting the level of MOSFETs Q11 and Q9, the ''1'' level transit voltage at the input node 8 when the output node 9 transits to a low level can arbitrarily be set.
申请公布号 JPS55136725(A) 申请公布日期 1980.10.24
申请号 JP19780018321 申请日期 1978.02.20
申请人 NIPPON ELECTRIC CO 发明人 SHIRATO HAJIME
分类号 H03K19/00;H03K19/0944 主分类号 H03K19/00
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