发明名称 MANUFACTURING METHOD OF SUBSTRATE GRAPHENE GROWTH WITHOUT USING METAL CATALYST AND SUBSTRATE GRAPHENE GROWTH WITHOUT USING METAL CATALYST
摘要 Provided are a manufacturing method of substrate grown graphene, substrate grown graphene, and an electronic part comprising the same. The manufacturing method of substrate grown graphene comprises the following steps of: (1) arranging a catalyst-free layer on a substrate; (2) providing an etching gas and a carbon-containing gas, and conducting low pressure chemical vapor deposition (LPCVD); (3) supplying an etching gas for the catalyst-free layer when supplying the carbon-containing gas, and growing graphene on the catalyst-free layer; and (4) continuously conducting LPCVD from the process of the step (3), and growing graphene on the substrate without the catalyst-free layer by continuously removing all of the catalyst-free layer by the etching gas.
申请公布号 KR20160086223(A) 申请公布日期 2016.07.19
申请号 KR20150003689 申请日期 2015.01.09
申请人 LEE, YOUN TEK 发明人 LEE, YOUN TEK
分类号 C01B31/04 主分类号 C01B31/04
代理机构 代理人
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