| 摘要 |
Although in the semiconductor device using a hetero junction including an electron transport layer of GaN and an electron supply layer of AlGaN, etc. normally off can be made by forming a p-type layer between the electron supply layer and a gate electrode, on-resistance is high because the surface of the electron supply layer becomes rough when forming the p-type layer in a local area. To solve this problem, an insulation layer covering the surface of the electron supply layer exposed between the source electrode and the p-type layer and the surface of the electron supply layer exposed between the drain electrode and the p-type layer can be charged positive. Thus, two-dimensional electron gas concentration applied to the hetero junction rises so that the on-resistance can be lowered. |
