发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES IN WHICH OXIDE REGIONS ARE FORMED BY AN OXIDATION MASK DISPOSED DIRECTLY ON A SUBSTRATE DAMAGED BY ION IMPLANTATION |
摘要 |
<p>METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES IN WHICH OXIDE REGIONS ARE FORMED BY AN OXIDATION MASK DISPOSED DIRECTLY ON A SUBSTRATE DAMAGED BY ION IMPLANTATION A method of manufacturing semiconductor devices of the type wherein regions of oxide such as silicon oxide recessed or inset in a silicon substrate are formed by oxidation of the silicon with the use of a masking layer protecting locally against the oxidation. In order to prevent the formation of a projecting oxide beak under the masking layer a nitride oxidation mask is applied directly to the substrate which has been previously ion-implanted to a controlled depth and then annealed to generate a dense dislocation network array on the substrate surface to prevent mechanical stress defects which normally would occur when a nitride mask is applied directly to a substrate.</p> |
申请公布号 |
CA1088217(A) |
申请公布日期 |
1980.10.21 |
申请号 |
CA19780300719 |
申请日期 |
1978.04.07 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CROWDER, BILLY L.;HUNTER, WILLIAM R.;ORMOND, DOUGLAS W., JR. |
分类号 |
H01L21/76;H01L21/265;H01L21/306;H01L21/316;H01L21/318;H01L21/32;H01L21/322;H01L21/762;(IPC1-7):01L21/265;01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|