| 摘要 |
PURPOSE:To provide a gate electrode of low resistance and prescribed dimensions in a prescribed position with high accuracy, without being afected by thickness of insulation film and also without having the electrode's etched. CONSTITUTION:n-Epitaxial layer 42 and SiO2 layer 48 are laminated on semi-insulating GaAs substrate 41, and a window 47 is opened by CF4 gas plasma using resist mask 45. After cleaning, dual film 49 consisting of Ti 51 and other metal 52 is formed and Schottky joint 50 is made between the n-layer 42 and the film. And then, resist mask 55 is provided and etched by Ar ion and CF4 gas plasma so as to make metallic layer 56 and SiO2 layer 61. By removing the mask 55 and brazing Au-Ge alloy film, electrodes 63-65 which are in ohmic contact with the n-layer 42 are formed. By using method, gate electrode layer 56 can be formed into a prescribed thickness without any difficulty and dimensions of the electroe 56 can be determined by dimension of window 47 to be easily formed with high accuracy, and therefore, it becomes possible to form a superior FET. |
