| 摘要 |
PURPOSE:To improve light-emitting characteristics, by laminating on substrate three layers consisting of two blocking layers and an active layer caught between them, and also by forming the three layers by compound semiconductors of 3-5 elements selected from among 8 elements consisting of Ga, In, As, P, Al, Sb, Ge and Sn. CONSTITUTION:A blocking layer 2, an active layer 3 and a blocking layer 4 are laminated onto a semiconductor substrate 1 in turn, and electrodes 5 and 6 are attached. The substrate 1 is a compound semiconductor composed of 2 elements of In and P, the layers 2 and 4 are compound semiconductors consisting of 5 elements of Ga, In, As, P and Al, and the layer 3 is a compound semiconductor constituted by 5 elements including Ga, In, As, P and Sb. Or, the substrate is to be a compound semiconductor composed of In and P, the layers 2 and 4 are to consist of 4 elements of Ga, Al, Sb and P, and the layer 3 is to be constituted by 4 elements of Ga, Al, Sb and In. By laminating compound semiconductor layers of other prescribed combination, it is to become possible to achieve radiation of light at longer wave, in longer region, at lower threshold current, at better temperature characteristics and higher efficiency than the conventional and, besides, at room temperature. |
