| 摘要 |
PURPOSE:To prevent the formation of pn-junction between a doped polycrystalline Si wiring layer and a reverse conducting type diffusion layer by interposing a metal silicide layer with high melting point between a doped polycrystalline Si wiring layer and a reverse conducting type diffusion layer and by making a good ohmic connection. CONSTITUTION:p-Type layers 15, 16 and n<+>-layers 17, 18 are formed in an n- epitaxial layer surrounded by an n<+>-buried layer and a p<+>-isolation layer. Selective windows 211, 212 and 213 are provided on an SiO2 film 20 and platinum silicide 23 is selectively sticked to the window 213 of the p-layer 15. Then, an n-type polycrystalline Si 24 and an SiO2 25 are stacked and after selectively removing the film 25 by an Si3N4 mask 26, selective oxidation is made to form an SiO2 film 27 and polycrystalline Si layers 28, 29 and 30. Electrodes 32, 33 and 34 are formed by removing the masks 26, by covering with a PSG31 and by selectively cutting the windows. By this composition, a good ohmic connection is made for the polycrystalline Si electrode 28 and the p-layer 16 by the platinum silicide layer 23 and fixed element functions are shown without forming pn-junction and a good and high integrated device is formed. |
