| 摘要 |
PURPOSE:To avoid crack generation by laying SiO2 film between an element and glass, when fusion welding the element with a semiconductor device container using glass of a low fusing point. CONSTITUTION:When fixing a semiconductor element 1 on a package 2 of a semiconductor device consisting of a ceramic base body 3, the back surface of the element 1 is wrapping fixed with SiO2 film 7 and said surface is adhered onto the base body 3 using the low fusing point glass 4, whereby the film 7 can be of SiO2 generating naturally during the making process or of SiO2, which is newly wrapping fixed. In this way, the wetting of the element 1 and of the glass 4 is improved and moreover a crack does not generate, thus making it possible to use glass for an especially enlarged size of element and subsequently to lower the costs. |
