发明名称 SOLID STATE MEMORY (SSM), COMPUTER SYSTEM INCLUDING AN SSM, AND METHOD OF OPERATING AN SSM
摘要 In one aspect, data is stored in a solid state memory which includes first and second memory layers. A first assessment is executed to determine whether received data is hot data or cold data. Received data which is assessed as hot data during the first assessment is stored in the first memory layer, and received data which is first assessed as cold data during the first assessment is stored in the second memory layer. Further, a second assessment is executed to determine whether the data stored in the first memory layer is hot data or cold data. Data which is then assessed as cold data during the second assessment is migrated from the first memory layer to the second memory layer.
申请公布号 US2016231941(A1) 申请公布日期 2016.08.11
申请号 US201615130464 申请日期 2016.04.15
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 Oh Moon-wook;Kim Do-geun;Park Chan-ik
分类号 G06F3/06 主分类号 G06F3/06
代理机构 代理人
主权项 1. A memory system, comprising: a first group of flash memory cells, each of the first group of flash memory cells configured to store one bit per cell; a second group of flash memory cells, each of the second group of flash memory cells configured to store two or more bits per cell; and a controller in communication with the first group of flash memory cells and the second group of flash memory cells, wherein the controller is configured to receive input data from a host and write the input data to one of the first group of flash memory cells and the second group of flash memory cells based on the size of the input data, and the controller is further configured to migrate first data from the first group of flash memory cells to the second group of flash memory cells if the number of available memory cells in the first group of flash memory cell is less than a first threshold, wherein the controller is configured to write the input data to the first group of flash memory cells if the size of the input data is less than the second threshold, and wherein the controller is configured to write the input data to the second group of flash memory cells, bypassing the first group of flash memory cells, if the size of the input data is equal to or greater than the second threshold.
地址 Suwon-si KR