| 摘要 |
PURPOSE:To detect the presence or absence of a defect in a bulk effect element and control the operation of the element by forming a Schottky junction around the electrode of an operation layer. CONSTITUTION:An electode 5b and an ohmic layer 3b are partially removed such as, for example, a periphery is removed to expose the surface of an operation layer 2b, metal is vacuum evaporated on the surface to form a Schottky electrode 6. The current vs. voltage characteristics observed between the Schottky electrode 6 and the electrode 4 or 5b exhibit the Schottky junction diode characteristics formed with the operation layer 2b and the electrode 6 to detect the existence or non-existence of malfunction of the crystal structure of the operation layer readily from the knowledge of the normal Schottky junction diode. |
