| 摘要 |
PURPOSE:To prevent the erosion of glass when giving a photo etching and to improve a yield rate by obtaining a mask with an unnecessary portion removed after adhering a photographic thin film on the concavo-convex main surface of a semiconductor. CONSTITUTION:A glass 12 is embedded in the moat 13 of a semiconductor device 11, SiO2 films 14 and 15 are coated on the two main surfaces excluding the moats, and a photo resist, consisting of a thick (over 25mum) dry-film 16, is attached to all over the main surface with moats. Then a window is opened on a dry-film 16 in order to open a window on a SiO2 film 14 to be used for a contact adhering section 17, and the SiO2 film is removed by etching. Next, all over the main surface of a semiconductor device 11 is covered by a contact metal films 19 and 19', and the contact metal film 19, excluding the contact adhering section 17, is removed by dissolving the dry-film with an organic solvent. By performing the jobs above- mentioned, a highly accurate contact metal film 19 is formed, and the erosion of glass 12 can be prevented, thereby giving an improvement in the yield rate. |
