| 摘要 |
PURPOSE:To provide a stable and reliable junction characteristics of a semiconductor device by forming the distance from mesa top surface to a main junction shorter than the distance from the mesa top surface to a guard ring junction formed continuously to the main junction. CONSTITUTION:A p-type layer 12 and a pi-type layer 13 are formed on a substrate wafer 11. A diffused region 15 is then formed, and a p<+>-type region 16 is then formed thereon. After the oxide film on the surface is entirely removed, an oxide film 17 is formed by a vapor phase chemical reaction process, an unnecessary oxide film is removed, and a reflection preventive film SiO2 film 18 is formed thereafter by a CVD process. Subsequently, electrodes 19, 20 are formed thereon. |
