| 摘要 |
PURPOSE:To form a pattern with high resolving power by forming a positive type resist film, on a substrate, made of cyclohexyl methacrylate polymer or copolymer of cyclohexyl methacrylate, a copolymerizable uncrosslinkable monomer and a crosslinkable monomer after which the film is irradiated with radiant rays to draw a pattern and developed. CONSTITUTION:A solution copoly,er of cyclohexyl methacrylate 10-90mol%, a copolymerizable uncrosslinkable monomer 0-90mol% and a crosslinkable monomer such as methacrylic acid, methacrylic acid chloride or methacrylamide 1-20mol% is coated onto a substrate and heated to 120-250 deg.C to form a resist film with a three-dimensional network structure. This film is then irradiated with radiant rays such as electron beams to form a pattern and developed by dipping in a solvent such as methyl isobutyl ketone. Thus, a minute pattern is formed with sensitivity several ten times as high as that of polymethyl methacrylate and resolving power of about 0.2mu in the smallest line width. |
