发明名称 |
Static discharge system |
摘要 |
A semiconductor circuit includes a three-terminal high voltage semiconductor device, a charge distribution structure and a static discharge system. The charge distribution structure has a plurality of conductors with a floating potential. The charge distribution structure is capacitively coupled to a first terminal of the semiconductor device. The static discharge system removes charge that accumulates on at least a subset of the conductors. The static discharge system removes the charge that accumulates on the subset of conductors when the semiconductor device is in a first state while allowing charge to accumulate on the subset of conductors when the semiconductor device is in a second state. |
申请公布号 |
US9425195(B2) |
申请公布日期 |
2016.08.23 |
申请号 |
US201514921161 |
申请日期 |
2015.10.23 |
申请人 |
POWER INTEGRATIONS, INC. |
发明人 |
Kudymov Alexey;Ramdani Jamal |
分类号 |
H01L27/088;H03K17/081;H01L29/40;H01L29/778;H01L27/06;H01L29/20 |
主分类号 |
H01L27/088 |
代理机构 |
Mayer & Williams PC |
代理人 |
Mayer Stuart H.;Mayer & Williams PC |
主权项 |
1. A semiconductor circuit, comprising:
a three-terminal high voltage semiconductor device; a charge distribution structure having a plurality of conductors with a floating potential, said charge distribution structure being capacitively coupled to a first terminal of the semiconductor device; and a static discharge system removing charge that accumulates on at least a subset of the conductors, said static discharge system removing the charge that accumulates on the subset of conductors when the semiconductor device is in a first state while allowing charge to accumulate on the subset of conductors when the semiconductor device is in a second state. |
地址 |
San Jose CA US |