发明名称 Static discharge system
摘要 A semiconductor circuit includes a three-terminal high voltage semiconductor device, a charge distribution structure and a static discharge system. The charge distribution structure has a plurality of conductors with a floating potential. The charge distribution structure is capacitively coupled to a first terminal of the semiconductor device. The static discharge system removes charge that accumulates on at least a subset of the conductors. The static discharge system removes the charge that accumulates on the subset of conductors when the semiconductor device is in a first state while allowing charge to accumulate on the subset of conductors when the semiconductor device is in a second state.
申请公布号 US9425195(B2) 申请公布日期 2016.08.23
申请号 US201514921161 申请日期 2015.10.23
申请人 POWER INTEGRATIONS, INC. 发明人 Kudymov Alexey;Ramdani Jamal
分类号 H01L27/088;H03K17/081;H01L29/40;H01L29/778;H01L27/06;H01L29/20 主分类号 H01L27/088
代理机构 Mayer & Williams PC 代理人 Mayer Stuart H.;Mayer & Williams PC
主权项 1. A semiconductor circuit, comprising: a three-terminal high voltage semiconductor device; a charge distribution structure having a plurality of conductors with a floating potential, said charge distribution structure being capacitively coupled to a first terminal of the semiconductor device; and a static discharge system removing charge that accumulates on at least a subset of the conductors, said static discharge system removing the charge that accumulates on the subset of conductors when the semiconductor device is in a first state while allowing charge to accumulate on the subset of conductors when the semiconductor device is in a second state.
地址 San Jose CA US