发明名称 |
Methods for producing interconnects in semiconductor devices |
摘要 |
A method for producing interconnects on a workpiece includes obtaining a workpiece substrate having a feature, depositing a conductive layer in the feature, to partially or fully fill the feature, depositing a copper fill to completely fill the feature if the feature is partially filled by the conductive layer, applying a copper overburden, thermally treating the workpiece, and removing the overburden to expose the substrate and the metalized feature. |
申请公布号 |
US9425092(B2) |
申请公布日期 |
2016.08.23 |
申请号 |
US201414211602 |
申请日期 |
2014.03.14 |
申请人 |
APPLIED Materials, Inc. |
发明人 |
Emesh Ismail T.;Shaviv Roey;Naik Mehul |
分类号 |
H01L21/76;H01L21/768;H01L23/532 |
主分类号 |
H01L21/76 |
代理机构 |
Christensen O'Connor Johnson Kindness PLLC |
代理人 |
Christensen O'Connor Johnson Kindness PLLC |
主权项 |
1. A method for forming an interconnect in a workpiece, the method comprising:
electrochemically depositing a second metallization layer on the workpiece comprising a nonmetallic substrate having a dielectric layer disposed over a substrate and a continuous first metallization layer disposed on the dielectric layer and having at least one microfeature comprising a recessed structure, wherein the first metallization layer at least partially fills a feature on the workpiece, where the first metallization layer is a single metal layer, and wherein the second metallization layer is a copper layer that is different from the metal of the first metallization layer; electrochemically depositing a copper cap layer after filling the feature; and annealing the workpiece to diffuse the metal of the second metallization layer into the metal of the first metallization layer. |
地址 |
Santa Clara CA US |