发明名称 PHOTOMASK COMPOSITION* PREPARING SAME* AND MASK PROVIDED FROM SAME
摘要 <p>Photomask compsn. decomposing when irradiated comprises copolymers of the alpha-alkylacrylic series substd. by >=2 halogen atoms and of formula where the R's are 1-10C alkyl substd. by F, Cl or Br, the indices a, a', b, b', c and c' being integers and are 0 or positive; m, n and p are 0 or positive integers, only one of m, n and p being 0. The compsn. is used as a positive photoresist and is degradable by electrons, UV (200-300 nm), X-rays (4-50 Angstroms) and gamma-rays. The compsn. exhibits high resolution and is used for the prodn. of integrated circuits and optics.</p>
申请公布号 JPS55133038(A) 申请公布日期 1980.10.16
申请号 JP19800029012 申请日期 1980.03.07
申请人 THOMSON CSF 发明人 ARUMAN ERANIAN;JIYAN KURAUDO DEYUBUOWA;ANDORE KUUTSUTOU;EBURIINU DATAMANTEI
分类号 C08F20/00;C08F20/22;C08F220/22;G03F1/00;G03F7/039;H01L21/027 主分类号 C08F20/00
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