发明名称 SEMICONDUCTOR DEVICE, PLATING TREATMENT METHOD, PLATING TREATMENT SYSTEM AND STORAGE MEDIUM
摘要 PROBLEM TO BE SOLVED: To improve adhesiveness between a catalyst adsorption layer on a substrate and a barrier metal plating layer.SOLUTION: A catalyst solution is supplied to a substrate 2 to form a catalyst adsorption layer 22 containing a catalyst metal on the substrate 2, and a plating treatment is applied onto the catalyst adsorption layer 22 by using the catalyst metal as a catalyst, to thereby form a joint metal layer 22A containing a joint metal which is different from the catalyst metal. A plating treatment is applied onto the joint metal layer 22A by using the joint metal as a catalyst, to thereby form a barrier metal plating layer 23.SELECTED DRAWING: Figure 3
申请公布号 JP2016156039(A) 申请公布日期 2016.09.01
申请号 JP20150033354 申请日期 2015.02.23
申请人 TOKYO ELECTRON LTD 发明人 INATOMI YUICHIRO;TANAKA TAKASHI;MIZUTANI NOBUTAKA;SAITO YUSUKE;IWAI KAZUTOSHI;IWASHITA MITSUAKI
分类号 C23C18/52;C23C18/32;C23C18/50;H01L21/28;H01L21/288;H01L21/768;H01L23/522 主分类号 C23C18/52
代理机构 代理人
主权项
地址