发明名称 |
SEMICONDUCTOR DEVICE, PLATING TREATMENT METHOD, PLATING TREATMENT SYSTEM AND STORAGE MEDIUM |
摘要 |
PROBLEM TO BE SOLVED: To improve adhesiveness between a catalyst adsorption layer on a substrate and a barrier metal plating layer.SOLUTION: A catalyst solution is supplied to a substrate 2 to form a catalyst adsorption layer 22 containing a catalyst metal on the substrate 2, and a plating treatment is applied onto the catalyst adsorption layer 22 by using the catalyst metal as a catalyst, to thereby form a joint metal layer 22A containing a joint metal which is different from the catalyst metal. A plating treatment is applied onto the joint metal layer 22A by using the joint metal as a catalyst, to thereby form a barrier metal plating layer 23.SELECTED DRAWING: Figure 3 |
申请公布号 |
JP2016156039(A) |
申请公布日期 |
2016.09.01 |
申请号 |
JP20150033354 |
申请日期 |
2015.02.23 |
申请人 |
TOKYO ELECTRON LTD |
发明人 |
INATOMI YUICHIRO;TANAKA TAKASHI;MIZUTANI NOBUTAKA;SAITO YUSUKE;IWAI KAZUTOSHI;IWASHITA MITSUAKI |
分类号 |
C23C18/52;C23C18/32;C23C18/50;H01L21/28;H01L21/288;H01L21/768;H01L23/522 |
主分类号 |
C23C18/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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