| 摘要 |
PURPOSE:To provide boron structural material excellent in mechanical properties with high productivity by a method wherein a silicon-contg. chromium layer is provided on the base metal to form a substrate, and the substrate is selectively removed. CONSTITUTION:On a base metal such as tantalum and titanium, chromium which contains 5-70mol% of silicon is deposited to form a 0.3-2mu layer, by means of electroplating or vacuum deposition, to form a substrate. The substrate is heated to about 900 deg.C or more and brought into contact with a mixed gas of BCl3 and H2 (about 1:3 volume ratio) so that boron is chemically deposited on the substrate to form a boron layer with a desired thickness. This is immersed into a solvent (e.g. a methanol solution of bromine, chlorine etc.) to selectively dissolve the substrate and remove it, leaving a structural material mainly consisting of single boron element. |
