Load resistance for GHZ frequencies and above - comprising doped semiconductor mesa-structure, and can be readily integrated into circuit

摘要

The load resistance consists of monocrystalline silicon mesa structures (21) doped n-negative (4 (4 kohms.cm) formed on top of an n-positive substrate (2) of monocrystalline silicon. A metal layer (52) is formed on the bottom of the substrate. The surface of the mesa structure is doped n-positive with an impurity (e.g. phosphorus) by heating. The thickness of this impurity layer is 0.3-0.6 microns and the impurity concentration lies between and cm3. Metal contacts (51) are finally produced on the flat tops of the mesas in the structure. The mesas may have circular bases and form discrete islands or they may be elongated and extend across the substrate.