| 摘要 |
PURPOSE:To eliminate the thick mask for implanting proton to high resistance layers of a striped semicodncutor laser in a method of fabricating a semiconductor light emitting diode by implanting the proton to predetermined depth of a clad layer grown on the active layer to form it into high resistance. CONSTITUTION:A wafer grown with an n-type clad layer 22, an active layer 23, a p-type clad layer 24 and a p-type contact layer 25 is formed on an n-type substrate 21 by a suitable epitaxial growing process, and a striped metal electrode 25 is formed thereon without irradiating proton thereto. The proton is then implanted thereto under the conditions of, for example, 300(keV) of accelerating energy and 2X10<15>(cm<-2>) of dosage to form high resistance layers 24', 25'. Further, it is heated at 450 deg.C for approx. 3 minutes to form an alloyed region 27. |
