| 摘要 |
PURPOSE:To improve reliability of a semiconductor devive by forming a separating region with insulator layers, the depth of which is larger than their width, as material to make the semiconductor device elements separated. CONSTITUTION:A resist pattern 2 is formed on a silicon substrate 1. An etching portion 3 is formed by ion-milling. Then, the resist pattern 2 is eliminated. With an oxide film 4 grown by heat-oxidation, the etching portion 3 is filled with heat- oxide layers 5. A field region 6 is formed by etching the oxide film 4. Then, a gate oxide film 7 and others are formed to complete a transistor. Element separation is assured by making a separation region 6 in such that its width is 3mum or less, its depth is 1mum larger than its width, and the depth is 1.5 times of more the width. |
